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BSS138W - N-Channel FET

Datasheet Summary

Description

These N

Channel Enhancement Mode Field Effect Transistor.

state resistance while provide rugged, reliable, and fast switching performance.

Features

  • RDS(on) = 3.5 W @ VGS = 10 V, ID = 0.22 A RDS(on) = 6.0 W @ VGS = 4.5 V, ID = 0.22 A.
  • High Density Cell Design For Extremely Low RDS(on).
  • Rugged and Reliable.
  • Compact Industry Standard SOT.
  • 323 Surface Mount Package.
  • These Devices are Pb.
  • Free and Halide Free.

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Datasheet preview – BSS138W

Datasheet Details

Part number BSS138W
Manufacturer ON Semiconductor
File Size 250.41 KB
Description N-Channel FET
Datasheet download datasheet BSS138W Datasheet
Additional preview pages of the BSS138W datasheet.

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Full PDF Text Transcription

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N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138W Description These N−Channel Enhancement Mode Field Effect Transistor. These products have been Designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • RDS(on) = 3.5 W @ VGS = 10 V, ID = 0.22 A RDS(on) = 6.0 W @ VGS = 4.5 V, ID = 0.
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